CS80N07A0 CR Micro 70V 80A N-Channel MOSFET TO-263 or D2PAK
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- 70 V / 80 A continuous drain current, TO-263 or D2PAK package
- Rds(on) 6.5 mΩ typ, 7.9 mΩ max at VGS = 10 V
- Qg 50.7 nC and Ciss 2595 pF
- N-channel, Trench process
The CR Micro CS80N07A0 is a 70 V 80 A N-channel MOSFET in a TO-263 or D2PAK package, built on the Trench process. On-resistance is 6.5 mΩ typical and 7.9 mΩ maximum at a 10 V gate drive; gate charge is 50.7 nC with 2595 pF input capacitance; threshold voltage spans 2 to 4 V.
Key Specifications
| Drain-Source Voltage (VDS) | 70 V |
| Continuous Drain Current (ID) | 80 A |
| Rds(on) @ VGS = 10 V, typ. | 6.5 mΩ |
| Rds(on) @ VGS = 10 V, max. | 7.9 mΩ |
| Gate Threshold Voltage (VGS(th)) | 2 – 4 V |
| Total Gate Charge (Qg) | 50.7 nC |
| Input Capacitance (Ciss) | 2595 pF |
| Channel Polarity | N-channel |
| Process Family | Trench |
| Package | TO-263 or D2PAK |
Process Technology
Trench — the gate is etched vertically into the drift region, multiplying channel width per unit area. Lowest Rds(on) in the sub-200 V range; the trade-off is higher Qg and a more fragile body diode under hard commutation.
Applications
Synchronous rectification in 12–48 V rails, point-of-load converters, and hot-swap circuits.
Selection Notes
- Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
- If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
- For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
- The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.
Common Questions
Is the CS80N07A0 an N-channel or P-channel device?
It is N-channel. The drain-source rating is 70 V.
Can the CS80N07A0 be driven at 4.5 V?
No 4.5 V on-resistance figure is published for this part. It is characterised at 10 V gate drive, so use a driver that reaches 10 V.
What is the gate threshold voltage of the CS80N07A0?
VGS(th) is specified between 2 and 4 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.
How much gate charge does the CS80N07A0 need?
Qg is 50.7 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.
What package does the CS80N07A0 come in?
TO-263 or D2PAK. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.
Shenzhen Gaorunxin Technology Co., Ltd
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