CS80N08A4 CR Micro 85V 80A N-Channel MOSFET TO-252 or DPAK
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- 85 V / 80 A continuous drain current, TO-252 or DPAK package
- Rds(on) 6.6 mΩ typ, 8.5 mΩ max at VGS = 10 V
- Qg 59.8 nC and Ciss 3564 pF
- N-channel, Trench process
The CR Micro CS80N08A4 is a 85 V 80 A N-channel MOSFET in a TO-252 or DPAK package, built on the Trench process. On-resistance is 6.6 mΩ typical and 8.5 mΩ maximum at a 10 V gate drive; gate charge is 59.8 nC with 3564 pF input capacitance; threshold voltage spans 2 to 4 V.
Key Specifications
| Drain-Source Voltage (VDS) | 85 V |
| Continuous Drain Current (ID) | 80 A |
| Rds(on) @ VGS = 10 V, typ. | 6.6 mΩ |
| Rds(on) @ VGS = 10 V, max. | 8.5 mΩ |
| Gate Threshold Voltage (VGS(th)) | 2 – 4 V |
| Total Gate Charge (Qg) | 59.8 nC |
| Input Capacitance (Ciss) | 3564 pF |
| Channel Polarity | N-channel |
| Process Family | Trench |
| Package | TO-252 or DPAK |
Process Technology
Trench — the gate is etched vertically into the drift region, multiplying channel width per unit area. Lowest Rds(on) in the sub-200 V range; the trade-off is higher Qg and a more fragile body diode under hard commutation.
Applications
Synchronous rectification in 12–48 V rails, point-of-load converters, and hot-swap circuits.
Selection Notes
- Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
- If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
- For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
- The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.
Common Questions
Is the CS80N08A4 an N-channel or P-channel device?
It is N-channel. The drain-source rating is 85 V.
Can the CS80N08A4 be driven at 4.5 V?
No 4.5 V on-resistance figure is published for this part. It is characterised at 10 V gate drive, so use a driver that reaches 10 V.
What is the gate threshold voltage of the CS80N08A4?
VGS(th) is specified between 2 and 4 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.
How much gate charge does the CS80N08A4 need?
Qg is 59.8 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.
What package does the CS80N08A4 come in?
TO-252 or DPAK. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.
Shenzhen Gaorunxin Technology Co., Ltd
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