CS8N25A3R CR Micro 250V 8A N-Channel MOSFET TO-251
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- 250 V / 8 A continuous drain current, TO-251 package
- Rds(on) 360 mΩ typ, 470 mΩ max at VGS = 10 V
- Qg 12.8 nC and Ciss 557 pF
- N-channel, Planar process
The CR Micro CS8N25A3R is a 250 V 8 A N-channel MOSFET in a TO-251 package, built on the Planar process. On-resistance is 360 mΩ typical and 470 mΩ maximum at a 10 V gate drive; gate charge is 12.8 nC with 557 pF input capacitance; threshold voltage spans 2 to 4 V.
Key Specifications
| Drain-Source Voltage (VDS) | 250 V |
| Continuous Drain Current (ID) | 8 A |
| Rds(on) @ VGS = 10 V, typ. | 360 mΩ |
| Rds(on) @ VGS = 10 V, max. | 470 mΩ |
| Gate Threshold Voltage (VGS(th)) | 2 – 4 V |
| Total Gate Charge (Qg) | 12.8 nC |
| Input Capacitance (Ciss) | 557 pF |
| Channel Polarity | N-channel |
| Process Family | Planar |
| Package | TO-251 |
Process Technology
Planar — the gate sits flat on the die surface. Lower channel density than trench designs, but a wider safe operating area, stronger avalanche withstand and simpler gate drive. Preferred for high-voltage and rugged industrial loads where robustness outranks on-resistance.
Applications
Telecom and server DC-DC stages, Class-D audio, PoE interfaces, and 48 V motor drive.
Selection Notes
- Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
- If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
- For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
- The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.
Common Questions
Is the CS8N25A3R an N-channel or P-channel device?
It is N-channel. The drain-source rating is 250 V.
Can the CS8N25A3R be driven at 4.5 V?
No 4.5 V on-resistance figure is published for this part. It is characterised at 10 V gate drive, so use a driver that reaches 10 V.
What is the gate threshold voltage of the CS8N25A3R?
VGS(th) is specified between 2 and 4 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.
How much gate charge does the CS8N25A3R need?
Qg is 12.8 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.
What package does the CS8N25A3R come in?
TO-251. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.
Shenzhen Gaorunxin Technology Co., Ltd
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