
The CR Micro HGD032N04A is a 40 V 145 A N-channel MOSFET in a TO-252 or DPAK package, built on the SGT process. On-resistance is 2.5 mΩ typical and 3.2 mΩ maximum at a 10 V gate drive; 3.3 mΩ typical at 4.5 V, so it also works from a logic-level driver; gate charge is 63.4 nC with 3020 pF input capacitance; threshold voltage spans 1 to 2.5 V.
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID) | 145 A |
| Rds(on) @ VGS = 10 V, typ. | 2.5 mΩ |
| Rds(on) @ VGS = 10 V, max. | 3.2 mΩ |
| Rds(on) @ VGS = 4.5 V, typ. | 3.3 mΩ |
| Rds(on) @ VGS = 4.5 V, max. | 4.1 mΩ |
| Gate Threshold Voltage (VGS(th)) | 1 – 2.5 V |
| Total Gate Charge (Qg) | 63.4 nC |
| Input Capacitance (Ciss) | 3020 pF |
| Channel Polarity | N-channel |
| Process Family | SGT |
| Package | TO-252 or DPAK |
| Part Number | VDS | ID | Rds(on) typ | Rds(on) max | Qg | Ciss | Package |
|---|---|---|---|---|---|---|---|
| CRTD028N04L2-G | 40V | 60A | 1.9 | 2.5 | 134 | 7681 | TO-252 or DPAK |
| CRTD030N04L | 40V | 80A | 2.5 | 3.3 | 114 | 5391 | TO-252 or DPAK |
| HGD032N04A | 40V | 145A | 2.5 | 3.2 | 63.4 | 3020 | TO-252 or DPAK |
| CRTD034N04L2-G | 40V | 130A | 2.6 | 3.4 | 106.7 | 5109 | TO-252 or DPAK |
| CRTD039N04L2-G | 40V | 60A | 3 | 3.7 | 68.3 | 3312 | TO-252 or DPAK |
| CRSD041N04N2Z | 40V | 80A | 3.6 | 5.4 | 26 | 1850 | TO-252 or DPAK |
| CRTD045N04L2P | 40V | 90A | 3.6 | 4.5 | 57.4 | 3006 | TO-252 or DPAK |
| CRTD063N04L | 40V | 80A | 4.5 | 6.3 | 47 | 2246 | TO-252 or DPAK |
| CRTD080N04L2-G | 40V | 50A | 6.2 | 7.8 | 29.6 | 1487 | TO-252 or DPAK |
9 part numbers share the same 40 / TO-252 or DPAK / N rating — sorted by rds(on) typ.
SGT (Shielded Gate Trench) — a trench gate with a grounded shield electrode beneath it. The shield cuts the gate-drain capacitance, so Qg and Crss drop sharply against a conventional trench at the same Rds(on). This is the workhorse process for 30–200 V and for 600–650 V high-frequency switching.
Low-voltage DC-DC converters, load switches, battery protection, and brushed or stepper motor drive.
Is the HGD032N04A an N-channel or P-channel device?
It is N-channel. The drain-source rating is 40 V.
Can the HGD032N04A be driven from a 4.5 V logic-level gate signal?
Yes. The datasheet characterises Rds(on) at 4.5 V: 3.3 mΩ typical and 4.1 mΩ maximum.
What is the gate threshold voltage of the HGD032N04A?
VGS(th) is specified between 1 and 2.5 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.
How much gate charge does the HGD032N04A need?
Qg is 63.4 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.
What package does the HGD032N04A come in?
TO-252 or DPAK. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.
How do I choose between the 9 part numbers in this rating group?
All 9 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.
Shenzhen Gaorunxin Technology Co., Ltd
Shenzhen Gaorunxin Technology Co., Ltd